Fast diffusion mechanism of silicon tri-interstitial defects
نویسندگان
چکیده
منابع مشابه
Calculations of Silicon Self-Interstitial Defects
We report a theoretical study of self-interstitial defects in silicon using local density approximation (LDA), PW91 generalized gradient approximation (GGA), and fixed-node diffusion quantum Monte Carlo (DMC) methods. The formation energies of the stablest interstitial defects are about 3.3 eV within the LDA, 3.8 eV within the PW91-GGA, and 4.9 eV within DMC. The DMC results indicate a value fo...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.72.241306